NTD4805NT4G
- Mfr.Part #
- NTD4805NT4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 12.7A/95A DPAK
- Stock
- 7,171
- In Stock :
- 7,171
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Published :
- 2008
- Case Connection :
- DRAIN
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Element Configuration :
- Single
- Drain Current-Max (Abs) (ID) :
- 95A
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 11.5V
- Operating Temperature :
- -55°C~175°C TJ
- Fall Time (Typ) :
- 8 ns
- Terminal Finish :
- Tin (Sn)
- Operating Mode :
- ENHANCEMENT MODE
- Length :
- 6.73mm
- Gate Charge (Qg) (Max) @ Vgs :
- 48nC @ 11.5V
- Avalanche Energy Rating (Eas) :
- 288 mJ
- JESD-30 Code :
- R-PSSO-G2
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 2.24W
- Number of Terminations :
- 2
- ECCN Code :
- EAR99
- Number of Pins :
- 4
- Turn On Delay Time :
- 17.2 ns
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Power Dissipation-Max :
- 1.41W Ta 79W Tc
- Factory Lead Time :
- 9 Weeks
- Resistance :
- 5mOhm
- Continuous Drain Current (ID) :
- 88A
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 2865pF @ 12V
- Turn-Off Delay Time :
- 20.8 ns
- Rise Time :
- 20.3ns
- Pin Count :
- 4
- Width :
- 6.22mm
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 5m Ω @ 30A, 10V
- Surface Mount :
- yes
- Height :
- 2.38mm
- Drain to Source Breakdown Voltage :
- 30V
- Current - Continuous Drain (Id) @ 25°C :
- 12.7A Ta 95A Tc
- Transistor Element Material :
- SILICON
- Datasheets
- NTD4805NT4G

N-Channel Tape & Reel (TR) 5m Ω @ 30A, 10V ±20V 2865pF @ 12V 48nC @ 11.5V TO-252-3, DPak (2 Leads + Tab), SC-63
NTD4805NT4G Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 288 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2865pF @ 12V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 88A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.A device can conduct a maximum continuous current of [95A] according to its drain current.It is [20.8 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 17.2 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 11.5V).
NTD4805NT4G Features
the avalanche energy rating (Eas) is 288 mJ
a continuous drain current (ID) of 88A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 20.8 ns
NTD4805NT4G Applications
There are a lot of ON Semiconductor
NTD4805NT4G applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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