NTD18N06LT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

60V

Factory Lead Time :

7 Weeks

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

18A

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

40

Voltage - Rated DC :

60V

Vgs(th) (Max) @ Id :

2V @ 250μA

Rise Time :

79ns

Transistor Element Material :

SILICON

Vgs (Max) :

±15V

Surface Mount :

yes

Fall Time (Typ) :

38 ns

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 5V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

18A Ta

Published :

2005

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

2.38mm

Turn-Off Delay Time :

19 ns

Pulsed Drain Current-Max (IDM) :

54A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Width :

6.22mm

Number of Terminations :

2

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

5V

Avalanche Energy Rating (Eas) :

72 mJ

Rds On (Max) @ Id, Vgs :

65m Ω @ 9A, 5V

Additional Feature :

LOGIC LEVEL COMPATIBLE

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

675pF @ 25V

Current Rating :

18A

Terminal Form :

Gull wing

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Radiation Hardening :

No

Operating Temperature :

-55°C~175°C TJ

Threshold Voltage :

1.8V

REACH SVHC :

No SVHC

Power Dissipation :

55W

Length :

6.73mm

Contact Plating :

Tin

Pin Count :

3

Turn On Delay Time :

9.9 ns

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

15V

Number of Pins :

3

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

2.1W Ta 55W Tj

Resistance :

54mOhm

JESD-609 Code :

e3

Element Configuration :

Single