NTD110N02RT4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Contact Plating :

Tin

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

Fall Time (Typ) :

21 ns

Input Capacitance (Ciss) (Max) @ Vds :

3440pF @ 20V

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 4.5V

Number of Elements :

1

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Resistance :

4.1mOhm

Case Connection :

DRAIN

Current Rating :

110A

JESD-30 Code :

R-PSSO-G2

Turn On Delay Time :

11 ns

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

ECCN Code :

EAR99

Pbfree Code :

yes

Factory Lead Time :

2 Weeks

Drain to Source Breakdown Voltage :

24V

Vgs(th) (Max) @ Id :

2V @ 250μA

Voltage - Rated DC :

24V

Number of Terminations :

2

Radiation Hardening :

No

Nominal Vgs :

1.5 V

Drain Current-Max (Abs) (ID) :

32A

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

27 ns

Power Dissipation-Max :

1.5W Ta 110W Tc

Pin Count :

4

Continuous Drain Current (ID) :

110A

Rise Time :

39ns

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Published :

2011

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Current - Continuous Drain (Id) @ 25°C :

12.5A Ta 110A Tc

Number of Pins :

4

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

4.6m Ω @ 20A, 10V

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

Surface Mount :

yes

Power Dissipation :

2.88W

FET Type :

N-Channel