NTD18N06LT4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

72 mJ

Factory Lead Time :

7 Weeks

Number of Elements :

1

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

18A

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

60V

Lead Free :

Lead Free

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

15V

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

65m Ω @ 9A, 5V

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G2

Fall Time (Typ) :

38 ns

JESD-609 Code :

e3

Radiation Hardening :

No

Turn-Off Delay Time :

19 ns

Vgs(th) (Max) @ Id :

2V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drive Voltage (Max Rds On,Min Rds On) :

5V

Published :

2005

Input Capacitance (Ciss) (Max) @ Vds :

675pF @ 25V

Power Dissipation :

55W

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

Current Rating :

18A

Contact Plating :

Tin

Vgs (Max) :

±15V

REACH SVHC :

No SVHC

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

18A Ta

Transistor Application :

SWITCHING

Threshold Voltage :

1.8V

Case Connection :

DRAIN

Power Dissipation-Max :

2.1W Ta 55W Tj

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Number of Terminations :

2

Number of Pins :

3

Additional Feature :

LOGIC LEVEL COMPATIBLE

Height :

2.38mm

Operating Mode :

ENHANCEMENT MODE

Resistance :

54mOhm

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

9.9 ns

Rise Time :

79ns

Voltage - Rated DC :

60V

Width :

6.22mm

Pulsed Drain Current-Max (IDM) :

54A

Length :

6.73mm

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 5V