NTD14N03RT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

10 Weeks

Contact Plating :

Tin

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

28A

Voltage - Rated DC :

25V

Element Configuration :

Single

Drain to Source Breakdown Voltage :

25V

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2V @ 250μA

Number of Pins :

3

Fall Time (Typ) :

27 ns

Turn On Delay Time :

3.8 ns

ECCN Code :

EAR99

Length :

6.73mm

Number of Elements :

1

Power Dissipation :

1.56W

Resistance :

130mOhm

Lead Free :

Lead Free

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Number of Terminations :

2

Pin Count :

3

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Terminal Form :

Gull wing

Power Dissipation-Max :

1.04W Ta 20.8W Tc

Width :

6.22mm

FET Type :

N-Channel

Continuous Drain Current (ID) :

14A

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Rds On (Max) @ Id, Vgs :

95m Ω @ 5A, 10V

Turn-Off Delay Time :

9.6 ns

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

Height :

2.38mm

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

115pF @ 20V

Surface Mount :

yes

Current Rating :

14A

Case Connection :

DRAIN

Rise Time :

27ns

Published :

2007

Gate Charge (Qg) (Max) @ Vgs :

1.8nC @ 5V