NTB90N02T4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Terminal Finish :

TIN LEAD

Pin Count :

3

DS Breakdown Voltage-Min :

24V

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

5.8m Ω @ 90A, 10V

Power Dissipation-Max :

85W Tc

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Pbfree Code :

No

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

90A Ta

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain-source On Resistance-Max :

0.0058ohm

Transistor Application :

SWITCHING

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

90A

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 4.5V

JESD-30 Code :

R-PSSO-G2

Qualification Status :

COMMERCIAL

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

733 mJ

JESD-609 Code :

e0

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

24V

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

240

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

200A

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

2.12pF @ 20V

RoHS Status :

Non-RoHS Compliant