NTB90N02

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Power Dissipation-Max :

85W Tc

Number of Elements :

1

Continuous Drain Current (ID) :

90A

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Terminal Finish :

Tin/Lead (Sn/Pb)

Rds On (Max) @ Id, Vgs :

5.8m Ω @ 90A, 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

Non-RoHS Compliant

Drain to Source Breakdown Voltage :

24V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Form :

Gull wing

Number of Terminations :

2

Mount :

Surface Mount

Current Rating :

90A

FET Type :

N-Channel

Packaging :

Tube

Turn-Off Delay Time :

28 ns

Pin Count :

3

Avalanche Energy Rating (Eas) :

733 mJ

Drain-source On Resistance-Max :

0.0058ohm

Input Capacitance (Ciss) (Max) @ Vds :

2120pF @ 20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2007

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

90A Ta

Transistor Element Material :

SILICON

Lead Free :

Contains Lead

Vgs(th) (Max) @ Id :

3V @ 250µA

JESD-609 Code :

e0

Pulsed Drain Current-Max (IDM) :

200A

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 4.5V

Peak Reflow Temperature (Cel) :

235

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

Power Dissipation :

85W

HTS Code :

8541.29.00.95

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Fall Time (Typ) :

60 ns

Voltage - Rated DC :

24V

Reach Compliance Code :

not_compliant

Rise Time :

90ns