NTB75N06LT4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

265ns

Avalanche Energy Rating (Eas) :

844 mJ

Rds On (Max) @ Id, Vgs :

11m Ω @ 37.5A, 5V

JESD-609 Code :

e0

Continuous Drain Current (ID) :

75A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin/Lead (Sn/Pb)

Terminal Form :

Gull wing

Power Dissipation-Max :

2.4W Ta 214W Tj

Drain-source On Resistance-Max :

0.011Ohm

RoHS Status :

Non-RoHS Compliant

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

92nC @ 5V

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Surface Mount

Qualification Status :

Not Qualified

Terminal Position :

Single

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Contains Lead

Current - Continuous Drain (Id) @ 25°C :

75A Ta

Pulsed Drain Current-Max (IDM) :

225A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

4370pF @ 25V

Number of Pins :

3

Transistor Application :

SWITCHING

Pin Count :

3

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

5V

Mounting Type :

Surface Mount

Published :

2004

Current Rating :

75A

Peak Reflow Temperature (Cel) :

235

FET Type :

N-Channel

Reach Compliance Code :

not_compliant

Voltage - Rated DC :

60V

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON