NTB75N06L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

5V

RoHS Status :

Non-RoHS Compliant

Number of Elements :

1

Avalanche Energy Rating (Eas) :

844 mJ

Mounting Type :

Surface Mount

Voltage - Rated DC :

60V

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.011Ohm

Pulsed Drain Current-Max (IDM) :

225A

Reach Compliance Code :

not_compliant

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

75A Ta

Rds On (Max) @ Id, Vgs :

11m Ω @ 37.5A, 5V

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id :

2V @ 250μA

Terminal Finish :

Tin/Lead (Sn/Pb)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Transistor Application :

SWITCHING

Power Dissipation-Max :

2.4W Ta 214W Tj

ECCN Code :

EAR99

Continuous Drain Current (ID) :

75A

FET Type :

N-Channel

JESD-609 Code :

e0

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lead Free :

Contains Lead

Published :

2004

Terminal Form :

Gull wing

Pin Count :

3

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

92nC @ 5V

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

4370pF @ 25V

Vgs (Max) :

±20V

Terminal Position :

Single

Current Rating :

75A

Peak Reflow Temperature (Cel) :

235