NTB25P06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

1.68pF @ 25V

Transistor Application :

SWITCHING

Terminal Finish :

TIN LEAD

Rds On (Max) @ Id, Vgs :

82m Ω @ 25A, 10V

Drain-source On Resistance-Max :

0.082Ohm

Mounting Type :

Surface Mount

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

80A

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Polarity/Channel Type :

N-Channel

FET Type :

P-Channel

JESD-609 Code :

e0

Peak Reflow Temperature (Cel) :

225

Transistor Element Material :

SILICON

Number of Terminations :

2

Power Dissipation-Max :

120W Tj

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

Non-RoHS Compliant

Drain to Source Voltage (Vdss) :

60V

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

27.5A

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Form :

Gull wing

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±15V

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

DS Breakdown Voltage-Min :

60V

Avalanche Energy Rating (Eas) :

600 mJ

Qualification Status :

COMMERCIAL

Packaging :

Tube

Pbfree Code :

No

Pin Count :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current - Continuous Drain (Id) @ 25°C :

27.5A Ta