NTB22N06L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

66A

Transistor Element Material :

SILICON

Reach Compliance Code :

Unknown

Drain-source On Resistance-Max :

0.065Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

DS Breakdown Voltage-Min :

60V

Pbfree Code :

No

Vgs (Max) :

±10V

Avalanche Energy Rating (Eas) :

72 mJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain Current-Max (Abs) (ID) :

22A

Drain to Source Voltage (Vdss) :

60V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Power Dissipation-Max :

60W Tj

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

5V

Terminal Finish :

TIN LEAD

Number of Elements :

1

Qualification Status :

COMMERCIAL

Terminal Position :

Single

RoHS Status :

Non-RoHS Compliant

Rds On (Max) @ Id, Vgs :

65m Ω @ 11A, 5V

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2V @ 250μA

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

JESD-609 Code :

e0

Mounting Type :

Surface Mount

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

22A Ta

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

690pF @ 25V

Case Connection :

DRAIN