NTB082N65S3F
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- Mfr.Part #
- NTB082N65S3F
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 40A D2PAK
- Stock
- 8,689
- In Stock ：
- 8,689
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 81nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Input Capacitance (Ciss) (Max) @ Vds :
- 3410pF @ 400V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 12 Weeks
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Series :
- SuperFET® III
- Power Dissipation-Max :
- 313W Tc
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Terminal Finish :
- Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Voltage (Vdss) :
- 650V
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 82m Ω @ 20A, 10V
- Vgs (Max) :
- ±30V
- Datasheets
- NTB082N65S3F
N-Channel Tape & Reel (TR) 82m Ω @ 20A, 10V ±30V 3410pF @ 400V 81nC @ 10V 650V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB082N65S3F Description
The SUPERFET III MOSFET is a new high-voltage super-junction (SJ) MOSFET family from ON Semiconductor that uses charge balance technology to achieve remarkable low on-resistance and low gate charge performance. This cutting-edge technology is designed to reduce conduction loss, improve switching performance, and sustain high dv/dt rates. As a result, the SUPERFET III MOSFET is well suited to diverse power systems in terms of compactness and efficiency. The optimized reverse recovery performance of the SUPERFET III FRFET MOSFET's body diode can eliminate a component and improve system reliability.
NTB082N65S3F Features
-
700 V @ TJ = 150°C
-
Typ. RDS(on) = 70 m
-
100% Avalanche Tested
-
Ultra Low Gate Charge (Typ. Qg = 81 nC)
-
These Devices are Pb?Free and are RoHS Compliant
-
Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF)
NTB082N65S3F Applications
-
EV Charger
-
UPS / Solar
-
Industrial Power Supplies
-
Telecom / Server Power Supplies
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