NSVT30010MXV6T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Power Dissipation :

500mW

Max Collector Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

-5V

Terminal Finish :

Tin (Sn)

Collector Emitter Voltage (VCEO) :

600mV

Collector Base Voltage (VCBO) :

30V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Lead Free :

Lead Free

Power - Max :

500mW

Mounting Type :

Surface Mount

Current - Collector Cutoff (Max) :

15nA ICBO

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

420 @ 2mA 5V

Transition Frequency :

100MHz

Transistor Type :

2 PNP (Dual)

Pbfree Code :

yes

Frequency - Transition :

100MHz

Number of Pins :

6

Radiation Hardening :

No

hFE Min :

270

Pin Count :

6

ECCN Code :

EAR99

Package / Case :

SOT-563, SOT-666

Operating Temperature :

-55°C~150°C TJ

Published :

2011

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Factory Lead Time :

2 Weeks

Polarity :

PNP

Surface Mount :

yes

Collector Emitter Breakdown Voltage :

30V