NSVMUN5333DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Factory Lead Time :

8 Weeks

Collector Emitter Breakdown Voltage :

50V

Terminal Finish :

Tin (Sn)

Resistor - Emitter Base (R2) :

47k Ω

Pin Count :

6

Package / Case :

6-TSSOP, SC-88, SOT-363

Number of Pins :

6

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Continuous Collector Current :

100mA

JESD-609 Code :

e3

Lead Free :

Lead Free

Published :

2013

Min Operating Temperature :

-55°C

Element Configuration :

Dual

Number of Channels :

2

hFE Min :

80

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

Base Part Number :

MUN53**DW1

Current - Collector Cutoff (Max) :

500nA

Pbfree Code :

yes

Surface Mount :

yes

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Resistor - Base (R1) :

4.7k Ω

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Radiation Hardening :

No

Polarity :

NPN, PNP

Max Power Dissipation :

250mW

Max Collector Current :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

50V

Weight :

6.010099mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

150°C