NSVMUN5316DW1T1G
- Mfr.Part #
- NSVMUN5316DW1T1G
- Manufacturer
- onsemi
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- TRANS PREBIAS 1NPN 1PNP 50V SC88
- Stock
- 14,100
- In Stock :
- 14,100
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Additional Feature :
- BUILT IN BIAS RESISTOR
- JESD-609 Code :
- e3
- Number of Elements :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PDSO-G6
- Current - Collector Cutoff (Max) :
- 500nA
- Number of Terminations :
- 6
- Collector Emitter Voltage (VCEO) :
- 250mV
- Max Collector Current :
- 100mA
- Collector Emitter Breakdown Voltage :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 300μA, 10mA
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Configuration :
- SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- NPN AND PNP
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Terminal Form :
- Gull wing
- Published :
- 2014
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Resistor - Base (R1) :
- 4.7k Ω
- Power - Max :
- 250mW
- Pbfree Code :
- yes
- Max Power Dissipation :
- 250mW
- Terminal Finish :
- Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 5mA 10V
- Transistor Element Material :
- SILICON
- Reference Standard :
- AEC-Q101
- Mount :
- Surface Mount
- Factory Lead Time :
- 8 Weeks
- Datasheets
- NSVMUN5316DW1T1G

NSVMUN5316DW1T1G datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from ON Semiconductor stock available at
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