NSVMUN5314DW1T3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Power - Max :

250mW

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Collector Current :

100mA

Resistor - Base (R1) :

10k Ω

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Collector Emitter Breakdown Voltage :

50V

Current - Collector Cutoff (Max) :

500nA

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 4.7

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Number of Elements :

2

Terminal Form :

Gull wing

Resistor - Emitter Base (R2) :

47k Ω

Number of Terminations :

6

Max Power Dissipation :

250mW

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

JESD-30 Code :

R-PDSO-G6

Collector Emitter Voltage (VCEO) :

250mV

Transistor Element Material :

SILICON

Factory Lead Time :

8 Weeks

ECCN Code :

EAR99

Mount :

Surface Mount

Terminal Finish :

Tin (Sn)

Package / Case :

6-TSSOP, SC-88, SOT-363

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reference Standard :

AEC-Q101

Lead Free :

Lead Free

Polarity/Channel Type :

NPN AND PNP

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Published :

2014