NSVMUN5212DW1T1G
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- Mfr.Part #
- NSVMUN5212DW1T1G
- Manufacturer
- onsemi
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- TRANS 2NPN PREBIAS 0.25W SOT363
- Stock
- 14,574
- In Stock ：
- 14,574
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Factory Lead Time :
- 8 Weeks
- Resistor - Emitter Base (R2) :
- 22k Ω
- Transistor Type :
- 2 NPN - Pre-Biased (Dual)
- Max Operating Temperature :
- 150°C
- Number of Pins :
- 6
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Min Operating Temperature :
- -55°C
- Surface Mount :
- yes
- Halogen Free :
- Halogen Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- Base Part Number :
- MUN52**DW1T
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 5mA 10V
- Collector Emitter Breakdown Voltage :
- 50V
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 500nA
- hFE Min :
- 60
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 50V
- Polarity :
- NPN
- Max Collector Current :
- 100mA
- Published :
- 2012
- Resistor - Base (R1) :
- 22k Ω
- Pin Count :
- 6
- Number of Elements :
- 2
- Mounting Type :
- Surface Mount
- Element Configuration :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 300μA, 10mA
- Max Power Dissipation :
- 250mW
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Datasheets
- NSVMUN5212DW1T1G
NSVMUN5212DW1T1G datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from ON Semiconductor stock available at
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