NSB1706DMW5T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Lead Free :

Lead Free

Base Part Number :

NSB1706

Max Power Dissipation :

250mW

Height :

1mm

Max Output Current :

100mA

Terminal Form :

Gull wing

Current - Collector Cutoff (Max) :

500nA

Emitter Base Voltage (VEBO) :

6V

Contact Plating :

Tin

Additional Feature :

BUILT-IN BIAS RESISTOR

Min Operating Temperature :

-55°C

Width :

1.35mm

Published :

2009

Length :

2.2mm

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Resistor - Base (R1) :

4.7k Ω

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

5

Factory Lead Time :

8 Weeks

Max Breakdown Voltage :

50V

Configuration :

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

hFE Min :

80

Collector Emitter Breakdown Voltage :

50V

Operating Supply Voltage :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

50V

Continuous Collector Current :

100mA

Max Collector Current :

100mA

Voltage - Rated DC :

50V

RoHS Status :

ROHS3 Compliant

Current Rating :

100mA

Package / Case :

5-TSSOP, SC-70-5, SOT-353

Transistor Type :

2 NPN - Pre-Biased (Dual)

Max Operating Temperature :

150°C

ECCN Code :

EAR99

Polarity :

NPN

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Surface Mount :

yes

Pbfree Code :

yes

Collector Emitter Saturation Voltage :

250mV

Power Dissipation :

187mW

Number of Pins :

5

Collector Base Voltage (VCBO) :

50V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Transistor Application :

SWITCHING

Number of Elements :

2

JESD-609 Code :

e3

Number of Terminations :

5

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Resistor - Emitter Base (R2) :

47k Ω