NS2029M3T5G

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Mfr.Part #
NS2029M3T5G
Manufacturer
onsemi
Package / Case
SOT-723
Datasheet
Download
Description
TRANS PNP 50V 0.1A SOT723
Stock
200,480
In Stock :
200,480

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Pin Count :
3
Number of Pins :
3
Peak Reflow Temperature (Cel) :
260
Transistor Element Material :
SILICON
JESD-609 Code :
e3
Transistor Type :
PNP
Element Configuration :
Single
Max Collector Current :
100mA
Frequency :
140MHz
Terminal Finish :
Tin (Sn)
Max Power Dissipation :
265mW
Packaging :
Tape and Reel (TR)
Terminal Form :
Flat
Package / Case :
SOT-723
Collector Emitter Breakdown Voltage :
50V
RoHS Status :
ROHS3 Compliant
Transistor Application :
AMPLIFIER
Pbfree Code :
yes
Number of Elements :
1
Gain Bandwidth Product :
140MHz
ECCN Code :
EAR99
Surface Mount :
yes
Polarity/Channel Type :
PNP
Terminal Position :
Dual
Factory Lead Time :
8 Weeks
Time@Peak Reflow Temperature-Max (s) :
40
Collector Emitter Voltage (VCEO) :
50V
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 1mA 6V
Transition Frequency :
140MHz
Collector Base Voltage (VCBO) :
60V
Radiation Hardening :
No
Number of Terminations :
3
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Surface Mount
Lead Free :
Lead Free
Power Dissipation :
265mW
Emitter Base Voltage (VEBO) :
6V
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2007
Vce Saturation (Max) @ Ib, Ic :
500mV @ 5mA, 50mA
Datasheets
NS2029M3T5G
Introducing Transistors - Bipolar (BJT) - Single onsemi NS2029M3T5G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:SOT-723, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, NS2029M3T5G pinout, NS2029M3T5G datasheet PDF, NS2029M3T5G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NS2029M3T5G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NS2029M3T5G


PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP SOT-723 Tape & Reel (TR) Surface Mount

NS2029M3T5G Overview


This device has a DC current gain of 120 @ 1mA 6V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.In this part, there is a transition frequency of 140MHz.The maximum collector current is 100mA volts.

NS2029M3T5G Features


the DC current gain for this device is 120 @ 1mA 6V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 140MHz


NS2029M3T5G Applications


There are a lot of ON Semiconductor
NS2029M3T5G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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