NJVMJD350T4G

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Mfr.Part #
NJVMJD350T4G
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS PNP 300V 0.5A DPAK
Stock
5,004
In Stock :
5,004

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Base Part Number :
MJD350
Pin Count :
3
Transistor Type :
PNP
Number of Pins :
3
Factory Lead Time :
8 Weeks
Collector Emitter Saturation Voltage :
1V
Current - Collector (Ic) (Max) :
500mA
Transistor Application :
SWITCHING
Packaging :
Tape and Reel (TR)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
Reference Standard :
AEC-Q101
hFE Min :
30
Pbfree Code :
yes
Operating Temperature :
-65°C~150°C TJ
JESD-609 Code :
e3
Max Power Dissipation :
1.56W
Transition Frequency :
10MHz
Collector Emitter Breakdown Voltage :
300V
Case Connection :
COLLECTOR
Emitter Base Voltage (VEBO) :
3V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type :
Surface Mount
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Max Collector Current :
500mA
ECCN Code :
EAR99
Configuration :
Single
Polarity/Channel Type :
PNP
Vce Saturation (Max) @ Ib, Ic :
1V @ 10mA, 100mA
Terminal Form :
Gull wing
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 50mA 10V
RoHS Status :
ROHS3 Compliant
Gain Bandwidth Product :
10MHz
Number of Terminations :
2
Terminal Position :
Single
Collector Emitter Voltage (VCEO) :
300V
Terminal Finish :
Tin (Sn)
Published :
2006
JESD-30 Code :
R-PSSO-G2
Surface Mount :
yes
Transistor Element Material :
SILICON
Collector Base Voltage (VCBO) :
300V
Number of Elements :
1
Radiation Hardening :
No
Current - Collector Cutoff (Max) :
100μA
Datasheets
NJVMJD350T4G
Introducing Transistors - Bipolar (BJT) - Single onsemi NJVMJD350T4G from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:MJD350, Number of Pins:3, Operating Temperature:-65°C~150°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, Number of Terminations:2, NJVMJD350T4G pinout, NJVMJD350T4G datasheet PDF, NJVMJD350T4G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NJVMJD350T4G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NJVMJD350T4G


PNP -65°C~150°C TJ 100μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

NJVMJD350T4G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 50mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 10mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 3V.Parts of this part have transition frequencies of 10MHz.During maximum operation, collector current can be as low as 500mA volts.

NJVMJD350T4G Features


the DC current gain for this device is 30 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 10mA, 100mA
the emitter base voltage is kept at 3V
a transition frequency of 10MHz


NJVMJD350T4G Applications


There are a lot of ON Semiconductor
NJVMJD350T4G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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