NJVMJD31T4G
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- Mfr.Part #
- NJVMJD31T4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 40V 3A DPAK
- Stock
- 1,875
- In Stock ：
- 1,875
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2010
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 40V
- Number of Elements :
- 1
- Pin Count :
- 3
- Gain Bandwidth Product :
- 3MHz
- JESD-609 Code :
- e3
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- hFE Min :
- 10
- Power Dissipation :
- 1.56W
- Current - Collector Cutoff (Max) :
- 50μA
- Number of Pins :
- 3
- Transition Frequency :
- 3MHz
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- Transistor Type :
- NPN
- Surface Mount :
- yes
- Operating Temperature :
- -65°C~150°C TJ
- Continuous Collector Current :
- 3A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Configuration :
- Single
- Max Power Dissipation :
- 1.56W
- Weight :
- 260.39037mg
- Factory Lead Time :
- 8 Weeks
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 40V
- Collector Base Voltage (VCBO) :
- 40V
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 3A
- Frequency :
- 3MHz
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 1.2V
- Datasheets
- NJVMJD31T4G
NPN -65°C~150°C TJ 50μA 1 Elements NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
NJVMJD31T4G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.2V @ 375mA, 3A.Continuous collector voltages of 3A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 3MHz.During maximum operation, collector current can be as low as 3A volts.
NJVMJD31T4G Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz
NJVMJD31T4G Applications
There are a lot of ON Semiconductor
NJVMJD31T4G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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