NJVMJD31CT4G

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Mfr.Part #
NJVMJD31CT4G
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS NPN 100V 3A DPAK
Stock
5,000
In Stock :
5,000

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Published :
2005
Pbfree Code :
yes
Series :
Automotive, AEC-Q101
Operating Temperature :
-65°C~150°C TJ
Max Power Dissipation :
15W
Collector Emitter Voltage (VCEO) :
40V
Transistor Type :
NPN
Lead Free :
Lead Free
Collector Emitter Breakdown Voltage :
100V
Surface Mount :
yes
RoHS Status :
ROHS3 Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vce Saturation (Max) @ Ib, Ic :
1.2V @ 375mA, 3A
Transition Frequency :
3MHz
REACH SVHC :
No SVHC
Collector Base Voltage (VCBO) :
100V
ECCN Code :
EAR99
Mounting Type :
Surface Mount
Reach Compliance Code :
not_compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Factory Lead Time :
8 Weeks
Packaging :
Tape and Reel (TR)
Polarity/Channel Type :
NPN
Contact Plating :
Tin
Power Dissipation :
1.56W
Max Collector Current :
3A
Pin Count :
3
Number of Elements :
1
Frequency :
3MHz
Max Breakdown Voltage :
100V
Emitter Base Voltage (VEBO) :
5V
JESD-609 Code :
e3
Current - Collector Cutoff (Max) :
50μA
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
DC Current Gain (hFE) (Min) @ Ic, Vce :
25 @ 1A 4V
Number of Pins :
3
hFE Min :
10
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Datasheets
NJVMJD31CT4G
Introducing Transistors - Bipolar (BJT) - Single onsemi NJVMJD31CT4G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Pins:3, NJVMJD31CT4G pinout, NJVMJD31CT4G datasheet PDF, NJVMJD31CT4G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NJVMJD31CT4G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NJVMJD31CT4G


NPN -65°C~150°C TJ 50μA 1 Elements NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

NJVMJD31CT4G Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 25 @ 1A 4V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.2V @ 375mA, 3A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 3MHz is present in the part.There is a breakdown input voltage of 100V volts that it can take.Collector current can be as low as 3A volts at its maximum.

NJVMJD31CT4G Features


the DC current gain for this device is 25 @ 1A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz


NJVMJD31CT4G Applications


There are a lot of ON Semiconductor
NJVMJD31CT4G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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