NJVMJD243T4G
- Mfr.Part #
- NJVMJD243T4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 100V 4A DPAK
- Stock
- 3,839
- In Stock :
- 3,839
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Configuration :
- Single
- Max Collector Current :
- 4A
- Pin Count :
- 3
- Halogen Free :
- Halogen Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency - Transition :
- 40MHz
- Factory Lead Time :
- 8 Weeks
- Terminal Form :
- Gull wing
- Transition Frequency :
- 40MHz
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 100V
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Transistor Application :
- AMPLIFIER
- Number of Terminations :
- 2
- Case Connection :
- COLLECTOR
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- JESD-30 Code :
- R-PSSO-G2
- Reference Standard :
- AEC-Q101
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Single
- Max Power Dissipation :
- 1.4W
- Operating Temperature :
- -65°C~150°C TJ
- Published :
- 2007
- Collector Emitter Voltage (VCEO) :
- 600mV
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 100V
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Power - Max :
- 1.4W
- Base Part Number :
- MJD243
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 200mA 1V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Surface Mount :
- yes
- Datasheets
- NJVMJD243T4G

NPN -65°C~150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
NJVMJD243T4G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 200mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 100mA, 1A.The part has a transition frequency of 40MHz.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.
NJVMJD243T4G Features
the DC current gain for this device is 40 @ 200mA 1V
the vce saturation(Max) is 600mV @ 100mA, 1A
a transition frequency of 40MHz
NJVMJD243T4G Applications
There are a lot of ON Semiconductor
NJVMJD243T4G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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