NJV4030PT3G

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Mfr.Part #
NJV4030PT3G
Manufacturer
onsemi
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS PNP 40V 3A SOT223
Stock
3,754
In Stock :
3,754

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Vce Saturation (Max) @ Ib, Ic :
500mV @ 300mA, 3A
Mounting Type :
Surface Mount
Terminal Position :
Dual
Transition Frequency :
160MHz
Published :
2007
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tape and Reel (TR)
Case Connection :
COLLECTOR
Max Power Dissipation :
2W
Mount :
Surface Mount
Number of Pins :
4
Configuration :
Single
Number of Terminations :
4
Collector Emitter Breakdown Voltage :
40V
Current - Collector Cutoff (Max) :
100nA ICBO
Factory Lead Time :
12 Weeks
Package / Case :
TO-261-4, TO-261AA
Collector Emitter Voltage (VCEO) :
40V
Current - Collector (Ic) (Max) :
3A
Lead Free :
Lead Free
Number of Elements :
1
Radiation Hardening :
No
JESD-609 Code :
e3
Terminal Form :
Gull wing
Frequency :
160MHz
Pbfree Code :
yes
Pin Count :
4
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Contact Plating :
Tin
Collector Base Voltage (VCBO) :
40V
Transistor Type :
PNP
ECCN Code :
EAR99
Polarity/Channel Type :
PNP
Max Collector Current :
3A
RoHS Status :
ROHS3 Compliant
Transistor Element Material :
SILICON
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 1A 1V
Power Dissipation :
2W
Emitter Base Voltage (VEBO) :
6V
Datasheets
NJV4030PT3G
Introducing Transistors - Bipolar (BJT) - Single onsemi NJV4030PT3G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Pins:4, Number of Terminations:4, Package / Case:TO-261-4, TO-261AA, NJV4030PT3G pinout, NJV4030PT3G datasheet PDF, NJV4030PT3G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NJV4030PT3G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NJV4030PT3G


PNP -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

NJV4030PT3G Overview


In this device, the DC current gain is 200 @ 1A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 300mA, 3A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.160MHz is present in the transition frequency.Maximum collector currents can be below 3A volts.

NJV4030PT3G Features


the DC current gain for this device is 200 @ 1A 1V
the vce saturation(Max) is 500mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 160MHz


NJV4030PT3G Applications


There are a lot of ON Semiconductor
NJV4030PT3G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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