NE3210S01
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- Mfr.Part #
- NE3210S01
- Manufacturer
- CEL (California Eastern Laboratories)
- Package / Case
- 4-SMD
- Datasheet
- Download
- Description
- FET RF 4V 12GHZ S01
- Stock
- 49,460
- In Stock ：
- 49,460
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- Manufacturer :
- CEL (California Eastern Laboratories)
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Continuous Drain Current (ID) :
- 70mA
- Noise Figure :
- 0.35dB
- Gate to Source Voltage (Vgs) :
- -3V
- Operating Mode :
- Depletion Mode
- Voltage - Test :
- 2V
- Current Rating :
- 15mA
- Additional Feature :
- High Reliability
- Mount :
- Surface Mount
- Min Operating Temperature :
- -65°C
- Max Operating Temperature :
- 125°C
- Drain to Source Breakdown Voltage :
- 4V
- Current - Test :
- 10mA
- Power Dissipation :
- 165mW
- JESD-30 Code :
- O-PRDB-G4
- Number of Terminations :
- 4
- Drain to Source Voltage (Vdss) :
- 4V
- Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 1
- Frequency :
- 12GHz
- Pin Count :
- 4
- Package / Case :
- 4-SMD
- Polarity/Channel Type :
- N-Channel
- Case Connection :
- SOURCE
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Transistor Type :
- HFET
- RoHS Status :
- RoHS Compliant
- Terminal Position :
- Radial
- FET Technology :
- HETERO-JUNCTION
- Packaging :
- Strip
- Max Power Dissipation :
- 165mW
- Radiation Hardening :
- No
- Gain :
- 13.5dB
- Datasheets
- NE3210S01
NE3210S01 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from CEL stock available at
The CEL Transistors NE3210S01 is a FET (Field Effect Transistor) and a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is a three-terminal device with a gate, source, and drain. It is a unipolar device, meaning that it only conducts current in one direction. It is also a voltage-controlled device, meaning that the current flow is controlled by the voltage applied to the gate.
The CEL Transistors NE3210S01 is suitable for use in a variety of applications, including RF amplifiers, mixers, oscillators, and other high frequency applications. It is also suitable for use in low noise and high gain applications. It is also suitable for use in low power applications, as it has a low power consumption of only 0.5 mW.
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| NE3210S01-T1B | CEL (California Eastern Laboratories) | 46,912 | FET RF 4V 12GHZ S01 |
| NE3225NP35 | CEL (California Eastern Laboratories) | 968 | NEO MAGNET .32O.D.X0.25"T N35 |
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