NE3210S01

Manufacturer :

CEL (California Eastern Laboratories)

Product Category :

Transistors - FETs, MOSFETs - RF

Frequency :

12GHz

Max Operating Temperature :

125°C

Number of Elements :

1

Number of Pins :

1

Drain to Source Breakdown Voltage :

4V

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

4V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

165mW

Radiation Hardening :

No

Packaging :

Strip

Min Operating Temperature :

-65°C

Current - Test :

10mA

FET Technology :

HETERO-JUNCTION

Noise Figure :

0.35dB

Current Rating :

15mA

Case Connection :

SOURCE

Number of Terminations :

4

ECCN Code :

EAR99

Voltage - Test :

2V

RoHS Status :

RoHS Compliant

Max Power Dissipation :

165mW

Gate to Source Voltage (Vgs) :

-3V

Package / Case :

4-SMD

Continuous Drain Current (ID) :

70mA

Transistor Type :

HFET

Operating Mode :

Depletion Mode

Gain :

13.5dB

Terminal Position :

Radial

Polarity/Channel Type :

N-Channel

Pin Count :

4

Terminal Form :

Gull wing

Configuration :

Single

JESD-30 Code :

O-PRDB-G4

Additional Feature :

High Reliability