NE3210S01-T1B

Manufacturer :

CEL (California Eastern Laboratories)

Product Category :

Transistors - FETs, MOSFETs - RF

Pin Count :

4

Transistor Type :

HFET

Polarity/Channel Type :

N-Channel

Number of Elements :

1

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Current - Test :

10mA

Drain to Source Voltage (Vdss) :

4V

Packaging :

Tape and Reel (TR)

Package / Case :

4-SMD

Noise Figure :

0.35dB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

125°C

Voltage - Test :

2V

Case Connection :

SOURCE

Configuration :

Single

Min Operating Temperature :

-65°C

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

4V

Max Power Dissipation :

165mW

Gain :

13.5dB

FET Technology :

HETERO-JUNCTION

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

-3V

Mount :

Surface Mount

Number of Terminations :

4

Operating Mode :

Depletion Mode

Current Rating :

15mA

Continuous Drain Current (ID) :

70mA

JESD-30 Code :

O-PRDB-G4

Frequency :

12GHz

Additional Feature :

High Reliability

Terminal Position :

Radial

Number of Pins :

1

Terminal Form :

Gull wing

Power Dissipation :

165mW