NDS0610

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

2.5 ns

Pbfree Code :

yes

Weight :

30mg

Dual Supply Voltage :

-60V

Threshold Voltage :

-1.7V

Number of Pins :

3

Factory Lead Time :

8 Weeks

Contact Plating :

Tin

Drain to Source Voltage (Vdss) :

60V

Transistor Application :

SWITCHING

Fall Time (Typ) :

6.3 ns

FET Type :

P-Channel

Current Rating :

-120mA

Rds On (Max) @ Id, Vgs :

10 Ω @ 500mA, 10V

Width :

3.05mm

Input Capacitance (Ciss) (Max) @ Vds :

79pF @ 25V

Published :

2002

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

-60V

Max Junction Temperature (Tj) :

150°C

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

1

Vgs(th) (Max) @ Id :

3.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 10V

Transistor Element Material :

SILICON

Power Dissipation :

360mW

Voltage - Rated DC :

-60V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

Nominal Vgs :

-1.7 V

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

120mA Ta

Terminal Position :

Dual

Number of Terminations :

3

Feedback Cap-Max (Crss) :

5 pF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1.11mm

Number of Elements :

1

ECCN Code :

EAR99

Turn-Off Delay Time :

10 ns

Mounting Type :

Surface Mount

Resistance :

10Ohm

Lead Free :

Lead Free

Package / Case :

TO-236-3, SC-59, SOT-23-3

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

-120mA

Element Configuration :

Single

JESD-609 Code :

e3

Power Dissipation-Max :

360mW Ta

Radiation Hardening :

No

Rise Time :

6.3ns