NDS0605

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

360mW

Mounting Type :

Surface Mount

Voltage - Rated DC :

-60V

Lead Free :

Lead Free

Number of Pins :

3

Rise Time :

6.3ns

FET Type :

P-Channel

Factory Lead Time :

8 Weeks

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

79pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Published :

2002

REACH SVHC :

No SVHC

Current Rating :

-180mA

Dual Supply Voltage :

-60V

Continuous Drain Current (ID) :

180mA

Vgs(th) (Max) @ Id :

3V @ 250µA

Height :

1.2mm

Pbfree Code :

yes

Weight :

30mg

Fall Time (Typ) :

6.3 ns

Package / Case :

TO-236-3, SC-59, SOT-23-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 10V

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Resistance :

5Ohm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Width :

3.05mm

Max Junction Temperature (Tj) :

150°C

Power Dissipation-Max :

360mW Ta

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

-60V

Drain to Source Voltage (Vdss) :

60V

Current - Continuous Drain (Id) @ 25°C :

180mA Ta

Nominal Vgs :

-1.7 V

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Radiation Hardening :

No

Contact Plating :

Tin

ECCN Code :

EAR99

Threshold Voltage :

-1.7V

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

5 Ω @ 500mA, 10V

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

20 ns

Feedback Cap-Max (Crss) :

5 pF

Turn On Delay Time :

5 ns

Packaging :

Tape and Reel (TR)

Number of Channels :

1

Terminal Position :

Dual

Length :

2.92mm