NDS0605
- Mfr.Part #
- NDS0605
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 180MA SOT-23
- Stock
- 9,908
- In Stock :
- 9,908
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Length :
- 2.92mm
- Turn-Off Delay Time :
- 20 ns
- Factory Lead Time :
- 8 Weeks
- Continuous Drain Current (ID) :
- 180mA
- Width :
- 3.05mm
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 60V
- ECCN Code :
- EAR99
- Number of Channels :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 5 Ω @ 500mA, 10V
- FET Type :
- P-Channel
- Feedback Cap-Max (Crss) :
- 5 pF
- Power Dissipation :
- 360mW
- Rise Time :
- 6.3ns
- Threshold Voltage :
- -1.7V
- Mount :
- Surface Mount
- Current Rating :
- -180mA
- Terminal Position :
- Dual
- Gate Charge (Qg) (Max) @ Vgs :
- 2.5nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Dual Supply Voltage :
- -60V
- JESD-609 Code :
- e3
- Height :
- 1.2mm
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 79pF @ 25V
- Turn On Delay Time :
- 5 ns
- Number of Elements :
- 1
- Weight :
- 30mg
- Number of Pins :
- 3
- Max Junction Temperature (Tj) :
- 150°C
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 6.3 ns
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- -60V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Pbfree Code :
- yes
- Published :
- 2002
- Power Dissipation-Max :
- 360mW Ta
- Nominal Vgs :
- -1.7 V
- Resistance :
- 5Ohm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Drain to Source Breakdown Voltage :
- -60V
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 180mA Ta
- Datasheets
- NDS0605

P-Channel Tape & Reel (TR) 5 Ω @ 500mA, 10V ±20V 79pF @ 25V 2.5nC @ 10V 60V TO-236-3, SC-59, SOT-23-3
NDS0605 Description
ON Semiconductor's patented, high-cell-density DMOS technology is used to make NDS0605 P-Channel enhancement mode field effect transistors. This high-density method was created to reduce on-state resistance, provide durable and reliable performance, and allow for quick switching. They can be utilized in most applications requiring up to 180mA DC and can deliver current up to 1A with minimal effort. The NDS0605 is ideal for low-voltage applications that require a low-current high-side switch, according to NDS0605 datasheet.
NDS0605 Features
-
High saturation current
-
High density cell design for low RDS(ON)
-
?0.18A, ?60V. RDS(ON) = 5 ? @ VGS = ?10 V
-
Voltage controlled p-channel small signal switch
NDS0605 Applications
-
Load Switching
-
DC/DC converter
-
DC motor control
-
Battery protection
-
Power management control
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