NDB6060

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±16V

Continuous Drain Current (ID) :

48A

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 5V

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

20m Ω @ 24A, 10V

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Transistor Element Material :

SILICON

Current Rating :

48A

Element Configuration :

Single

Additional Feature :

LOGIC LEVEL COMPATIBLE

Case Connection :

DRAIN

Fall Time (Typ) :

161 ns

Threshold Voltage :

2V

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2V @ 250μA

Length :

6.35mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Terminations :

2

Turn-Off Delay Time :

49 ns

Termination :

SMD/SMT

Weight :

1.31247g

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 25V

Width :

6.35mm

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Avalanche Energy Rating (Eas) :

200 mJ

Voltage - Rated DC :

60V

FET Type :

N-Channel

Mount :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Number of Pins :

3

Dual Supply Voltage :

60V

Turn On Delay Time :

15 ns

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Height :

6.35mm

Factory Lead Time :

8 Weeks

JESD-30 Code :

R-PSSO-G2

Power Dissipation :

100W

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

REACH SVHC :

No SVHC

Resistance :

25mOhm

Power Dissipation-Max :

100W Tc

Rise Time :

320ns

Drain to Source Breakdown Voltage :

60V

Gate to Source Voltage (Vgs) :

16V

Operating Temperature :

-65°C~175°C TJ

Contact Plating :

Tin

Pbfree Code :

yes

Nominal Vgs :

2 V

Mounting Type :

Surface Mount

Radiation Hardening :

No