NDB6030PL
- Mfr.Part #
- NDB6030PL
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 30A D2PAK
- Stock
- 21,539
- In Stock :
- 21,539
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 75W
- Current Rating :
- -30A
- JESD-609 Code :
- e3
- Pulsed Drain Current-Max (IDM) :
- 90A
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Turn On Delay Time :
- 12.5 ns
- Element Configuration :
- Single
- Height :
- 11.33mm
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation-Max :
- 75W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- FET Type :
- P-Channel
- Number of Terminations :
- 2
- Width :
- 4.83mm
- Transistor Element Material :
- SILICON
- RoHS Status :
- RoHS Compliant
- Drain to Source Breakdown Voltage :
- -30V
- Published :
- 1997
- Contact Plating :
- Tin
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Rise Time :
- 60ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1570pF @ 15V
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 52 ns
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Rds On (Max) @ Id, Vgs :
- 25m Ω @ 19A, 10V
- Weight :
- 1.31247g
- Turn-Off Delay Time :
- 50 ns
- Drain to Source Voltage (Vdss) :
- 30V
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 5V
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- -30V
- Terminal Form :
- Gull wing
- Vgs (Max) :
- ±16V
- Continuous Drain Current (ID) :
- -30A
- Length :
- 10.67mm
- Operating Temperature :
- -65°C~175°C TJ
- Case Connection :
- DRAIN
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 16V
- Resistance :
- 25mOhm
- Datasheets
- NDB6030PL

P-Channel Tape & Reel (TR) 25m Ω @ 19A, 10V ±16V 1570pF @ 15V 36nC @ 5V 30V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NDB6030PL Description
NDB6030PL is a type of P-channel logic-level enhancement-mode field-effect transistor provided by ON Semiconductor based on its proprietary, high cell density, DMOS technology which makes this device capable of minimizing on-state resistance. It is well suited for low-voltage applications including DC/DC converters and high-efficiency switching circuits requiring low in-line power loss and resistance to transients.
NDB6030PL Features
-
Proprietary, high cell density, DMOS technology
-
Low RDS (on)
-
High-density cell design
-
Low on-state resistance
-
Available in the TO-263AB package
NDB6030PL Applications
-
DC/DC converters
-
High-efficiency switching circuits
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