NDB6030PL

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Contact Plating :

Tin

Vgs(th) (Max) @ Id :

2V @ 250μA

Number of Elements :

1

Turn-Off Delay Time :

50 ns

Drain to Source Voltage (Vdss) :

30V

FET Type :

P-Channel

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Turn On Delay Time :

12.5 ns

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate to Source Voltage (Vgs) :

16V

JESD-30 Code :

R-PSSO-G2

Fall Time (Typ) :

52 ns

Resistance :

25mOhm

JESD-609 Code :

e3

Continuous Drain Current (ID) :

-30A

Voltage - Rated DC :

-30V

Weight :

1.31247g

Width :

4.83mm

Power Dissipation :

75W

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 5V

Operating Temperature :

-65°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

11.33mm

Rds On (Max) @ Id, Vgs :

25m Ω @ 19A, 10V

Pulsed Drain Current-Max (IDM) :

90A

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

-30V

Number of Terminations :

2

RoHS Status :

RoHS Compliant

Pbfree Code :

yes

Element Configuration :

Single

Current Rating :

-30A

Lead Free :

Lead Free

Length :

10.67mm

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 3 days ago)

Published :

1997

Rise Time :

60ns

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

1570pF @ 15V

Power Dissipation-Max :

75W Tc

Transistor Element Material :

SILICON

Radiation Hardening :

No

Mount :

Surface Mount

Vgs (Max) :

±16V

Case Connection :

DRAIN