NAND512W3A2SZA6E

Manufacturer :

Micron Technology

Product Category :

Memory

Command User Interface :

yes

Word Size :

8B

Supply Voltage :

3V

Operating Temperature :

-40°C~85°C TA

Memory Interface :

Parallel

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

3V

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)

Write Cycle Time - Word, Page :

50ns

Published :

2004

Organization :

64MX8

Access Time (Max) :

35 ns

Terminal Position :

BOTTOM

Standby Current-Max :

0.00005A

Number of Functions :

1

Base Part Number :

NAND512

Radiation Hardening :

No

Memory Size :

512Mb 64M x 8

Mounting Type :

Surface Mount

Terminal Pitch :

0.8mm

Length :

11mm

Number of Terminations :

63

Toggle Bit :

No

Ready/Busy :

yes

Address Bus Width :

26b

Mount :

Surface Mount

Sector Size :

16k

Memory Type :

Non-Volatile

Package / Case :

63-TFBGA

Height Seated (Max) :

1.05mm

Number of Sectors/Size :

4k

Density :

512 Mb

Sync/Async :

ASYNCHRONOUS

Nominal Supply Current :

20mA

Packaging :

Tray

Memory Width :

8

Peak Reflow Temperature (Cel) :

260

Number of Pins :

63

Page Size :

512B

Voltage :

3V

Voltage - Supply :

2.7V~3.6V

JESD-609 Code :

e2

Data Polling :

No

ECCN Code :

3A991.B.1.A

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

HTS Code :

8542.32.00.51

Memory Format :

Flash