NAND01GW4B2AN6E

Manufacturer :

STMicroelectronics

Product Category :

Memory

Number of Terminations :

48

Supply Voltage :

3V

Qualification Status :

Not Qualified

Memory Size :

1Gb 64M x 16

Data Bus Width :

16b

Write Cycle Time - Word, Page :

30ns

Operating Temperature :

-40°C~85°C TA

JESD-609 Code :

e3/e6

Terminal Finish :

TIN/TIN BISMUTH

Length :

18.4mm

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Package / Case :

48-TFSOP (0.724, 18.40mm Width)

Programming Voltage :

3V

Memory Density :

1073741824 bit

Supply Voltage-Min (Vsup) :

2.7V

Memory Width :

16

Access Time (Max) :

25000 ns

Pbfree Code :

yes

HTS Code :

8542.32.00.51

Height Seated (Max) :

1.2mm

Memory Type :

Non-Volatile

Memory Format :

Flash

Surface Mount :

yes

Number of Functions :

1

Terminal Pitch :

0.5mm

Memory Interface :

Parallel

Organization :

64MX16

RoHS Status :

ROHS3 Compliant

Number of Pins :

48

Supply Voltage-Max (Vsup) :

3.6V

Terminal Position :

Dual

Pin Count :

48

Operating Mode :

ASYNCHRONOUS

Packaging :

Tray

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

3A991.B.1.A

Base Part Number :

NAND01

Reach Compliance Code :

Unknown

Voltage - Supply :

2.7V~3.6V