NAND01GR3B2CZA6E

Manufacturer :

Micron Technology

Product Category :

Memory

RoHS Status :

ROHS3 Compliant

HTS Code :

8542.32.00.51

Package / Case :

63-TFBGA

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Address Bus Width :

28b

Supply Voltage :

1.8V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-40°C~85°C TA

Height Seated (Max) :

1.05mm

Terminal Position :

BOTTOM

Mounting Type :

Surface Mount

Data Polling :

No

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tray

Memory Format :

Flash

Pin Count :

63

Sector Size :

128K

Memory Width :

8

Standby Current-Max :

0.00005A

Reach Compliance Code :

Unknown

Command User Interface :

yes

Word Size :

8B

Memory Type :

Non-Volatile

Memory Size :

1Gb 128M x 8

Supply Voltage-Min (Vsup) :

1.7V

Write Cycle Time - Word, Page :

25ns

Length :

11mm

Qualification Status :

Not Qualified

Organization :

128MX8

Mount :

Surface Mount

Ready/Busy :

yes

Operating Supply Voltage :

1.8V

Density :

1 Gb

Sync/Async :

ASYNCHRONOUS

Nominal Supply Current :

20mA

Toggle Bit :

No

Base Part Number :

NAND01G-A

Access Time (Max) :

25000 ns

Supply Voltage-Max (Vsup) :

1.95V

Number of Functions :

1

Number of Pins :

63

Number of Sectors/Size :

1k

Page Size :

2kB

ECCN Code :

3A991.B.1.A

Memory Interface :

Parallel

Terminal Pitch :

0.8mm

Voltage - Supply :

1.7V~1.95V

Number of Terminations :

63

Published :

2004