NAND512R3A2SZA6E

Manufacturer :

Micron Technology

Product Category :

Memory

Mounting Type :

Surface Mount

Address Bus Width :

26b

Memory Size :

512Mb 64M x 8

Pbfree Code :

yes

Supply Voltage :

1.8V

Voltage - Rated DC :

1.8V

Number of Pins :

63

Time@Peak Reflow Temperature-Max (s) :

30

Mount :

Surface Mount

Organization :

64MX8

Memory Type :

Non-Volatile

Operating Supply Voltage :

1.8V

Package / Case :

63-TFBGA

Contact Plating :

Copper, Silver, Tin

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Ambient Temperature Range High :

85°C

Voltage - Supply :

1.7V~1.95V

JESD-609 Code :

e1

Height :

1.05mm

HTS Code :

8542.32.00.51

Number of Terminations :

63

Memory Interface :

Parallel

Terminal Position :

BOTTOM

Voltage :

1.8V

Packaging :

Tray

Word Size :

8B

Operating Temperature :

-40°C~85°C TA

ECCN Code :

3A991.B.1.A

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Number of Functions :

1

Memory Format :

Flash

Memory Width :

8

Page Size :

512B

Write Cycle Time - Word, Page :

50ns

Nominal Supply Current :

15mA

Sync/Async :

ASYNCHRONOUS

Length :

11mm

Terminal Pitch :

0.8mm

Base Part Number :

NAND512

Peak Reflow Temperature (Cel) :

260

Density :

512 Mb

Pin Count :

63

Published :

2011

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)