NAND256W3A2BNXE
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- Mfr.Part #
- NAND256W3A2BNXE
- Manufacturer
- Micron Technology
- Package / Case
- 48-TFSOP (0.724, 18.40mm Width)
- Datasheet
- Download
- Description
- IC FLASH 256MBIT PARALLEL 48TSOP
- Stock
- 32,070
- In Stock ：
- 32,070
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Supply Voltage :
- 3V
- Pbfree Code :
- yes
- Number of Functions :
- 1
- Memory Format :
- Flash
- Memory Size :
- 256Mb 32M x 8
- Height Seated (Max) :
- 1.2mm
- Standby Current-Max :
- 0.00005A
- Number of Sectors/Size :
- 2k
- Density :
- 256 Mb
- Write Cycle Time - Word, Page :
- 50ns
- Page Size :
- 528B
- Command User Interface :
- yes
- Access Time (Max) :
- 45 ns
- Number of Pins :
- 48
- Memory Type :
- Non-Volatile
- Factory Lead Time :
- 4 Weeks
- Mount :
- Surface Mount
- Operating Supply Voltage :
- 3V
- Memory Width :
- 8
- Address Bus Width :
- 25b
- Ready/Busy :
- yes
- Toggle Bit :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- NAND256
- Terminal Pitch :
- 0.5mm
- Nominal Supply Current :
- 20mA
- Sector Size :
- 16k
- Package / Case :
- 48-TFSOP (0.724, 18.40mm Width)
- Data Polling :
- No
- Number of Terminations :
- 48
- Sync/Async :
- ASYNCHRONOUS
- Word Size :
- 8B
- Voltage :
- 3.3V
- Voltage - Supply :
- 2.7V~3.6V
- Terminal Finish :
- MATTE TIN
- Operating Temperature :
- -40°C~85°C TA
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 3.3V
- Terminal Position :
- Dual
- Organization :
- 32MX8
- Memory Interface :
- Parallel
- Mounting Type :
- Surface Mount
- Packaging :
- Tray
- Length :
- 18.4mm
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2012
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Datasheets
- NAND256W3A2BNXE
Memory Micron Technology NAND256W3A2BNXE Overview
Introducing the Memory Micron Technology NAND256W3A2BNXE, a high-performance IC FLASH memory device designed to meet the rigorous demands of high-capacity storage systems. This component offers a substantial 256Mbit storage capability, encapsulated in a reliable 48TSOP package. Ideal for applications requiring fast and reliable non-volatile memory, the NAND256W3A2BNXE by Micron Technology stands out for its durability and efficiency, making it a preferred choice for developers and manufacturers aiming for superior storage solutions. The integration of advanced manufacturing technology ensures this chip delivers consistent performance, enhancing the overall efficiency of electronic devices.
NAND256W3A2BNXE Features
The NAND256W3A2BNXE features a parallel interface, which provides greater speed and reliability in data transfer. Its 256Mbit capacity allows for ample storage of critical data. Manufactured in a 48TSOP package, it ensures robustness and ease of integration into various circuit boards. The flash memory type used is designed for excellent endurance and stability under a wide range of environmental conditions, making it a versatile choice for many industrial applications.
NAND256W3A2BNXE Applications
- Embedded Systems: Utilized in sophisticated embedded systems, the NAND256W3A2BNXE provides the necessary data retention and quick access required for efficient operation and reliability.
- Consumer Electronics: Essential for devices such as digital cameras, audio players, and gaming consoles, where large amounts of data storage and integrity are critical.
- Mobile Devices: Supports the high storage demands of mobile phones and tablets, ensuring smooth performance and durability.
- Automotive Applications: Relied upon in automotive electronics for navigation systems and infotainment, where long-lasting and dependable storage is crucial.
- Internet of Things (IoT) Devices: Plays a pivotal role in IoT devices, enabling efficient data management and high-speed operations in smart home products and automation systems.
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