NAND04GR3B2DN6E

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Mfr.Part #
NAND04GR3B2DN6E
Manufacturer
Micron Technology
Package / Case
48-TFSOP (0.724, 18.40mm Width)
Datasheet
Download
Description
IC FLASH 4GBIT PARALLEL 48TSOP
Stock
15,211
In Stock :
15,211

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Manufacturer :
Micron Technology
Product Category :
Memory
Terminal Position :
Dual
Access Time (Max) :
25000 ns
Sector Size :
128K
Peak Reflow Temperature (Cel) :
260
Supply Voltage-Min (Vsup) :
1.7V
Memory Interface :
Parallel
Supply Voltage-Max (Vsup) :
1.95V
RoHS Status :
ROHS3 Compliant
Operating Supply Voltage :
1.8V
Number of Sectors/Size :
4k
Mounting Type :
Surface Mount
Operating Temperature :
-40°C~85°C TA
Word Size :
16b
Time@Peak Reflow Temperature-Max (s) :
30
Ready/Busy :
yes
Organization :
512MX8
Standby Current-Max :
0.00005A
Sync/Async :
ASYNCHRONOUS
Packaging :
Tray
Page Size :
2Kwords
Terminal Finish :
Matte Tin (Sn)
Voltage - Supply :
1.7V~1.95V
Memory Width :
8
Memory Size :
4Gb 512M x 8
Qualification Status :
Not Qualified
Write Cycle Time - Word, Page :
25ns
JESD-609 Code :
e3
Number of Pins :
48
Mount :
Surface Mount
Published :
2010
Terminal Pitch :
0.5mm
Height Seated (Max) :
1.2mm
Pbfree Code :
yes
Memory Type :
Non-Volatile
Memory Format :
Flash
Density :
4 GB
Base Part Number :
NAND04G
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Supply Voltage :
1.8V
Toggle Bit :
No
Number of Terminations :
48
Address Bus Width :
1b
Data Polling :
No
Pin Count :
48
Command User Interface :
yes
Nominal Supply Current :
20mA
Package / Case :
48-TFSOP (0.724, 18.40mm Width)
Length :
18.4mm
Number of Functions :
1
Datasheets
NAND04GR3B2DN6E
Introducing Memory Micron Technology NAND04GR3B2DN6E from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-40°C~85°C TA, Number of Pins:48, Base Part Number:NAND04G, Number of Terminations:48, Package / Case:48-TFSOP (0.724, 18.40mm Width), NAND04GR3B2DN6E pinout, NAND04GR3B2DN6E datasheet PDF, NAND04GR3B2DN6E amp .Beyond Memory Micron Technology NAND04GR3B2DN6E ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Micron Technology NAND04GR3B2DN6E


Memory Micron Technology NAND04GR3B2DN6E Overview

Introducing the Memory Micron Technology NAND04GR3B2DN6E, a high-capacity 4Gbit NAND flash memory IC, packaged in a compact 48TSOP form factor. This advanced storage solution from Micron Technology is engineered to meet the rigorous demands of modern electronic devices, offering a blend of performance, reliability, and scalability. Its large storage capacity and fast parallel interface make it an ideal choice for applications requiring extensive data storage and swift data access. This IC is tailored to enhance the efficiency and performance of your high-volume data storage systems, making it a valuable asset for businesses aiming to leverage technology for competitive advantage.

NAND04GR3B2DN6E Features

The NAND04GR3B2DN6E flash memory IC boasts several key features that distinguish it from competitors. It provides a robust 4Gbit data storage capacity, ensuring ample space for large-scale applications. The parallel interface enhances data transfer speeds, facilitating faster read and write operations, crucial for performance-critical applications. Additionally, its 48TSOP package is designed for optimal integration into various device architectures, offering versatility and ease of installation.

NAND04GR3B2DN6E Applications

  • Digital Cameras: Utilized for storing high-resolution images and videos, where fast and reliable storage is paramount.
  • Portable Media Players: Provides the necessary storage capacity to house large multimedia files, enabling enhanced user experiences on the go.
  • GPS Devices: Employs its high storage capability to accommodate extensive map data and software updates, essential for navigation accuracy.
  • Automotive Infotainment Systems: Used in the storage of multimedia content, system updates, and user data, supporting advanced functionality in vehicle entertainment and information systems.
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