MTD3055VL
- Mfr.Part #
- MTD3055VL
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 22,127
- In Stock :
- 22,127
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Threshold Voltage :
- 1.5V
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 240
- Operating Temperature :
- -55°C~175°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 5V
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Width :
- 6.22mm
- Turn On Delay Time :
- 20 ns
- Voltage - Rated DC :
- 60V
- Vgs (Max) :
- ±20V
- Pin Count :
- 3
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Power Dissipation :
- 3.9W
- Mount :
- Surface Mount
- Current Rating :
- 12A
- Avalanche Energy Rating (Eas) :
- 72 mJ
- Number of Terminations :
- 2
- REACH SVHC :
- No SVHC
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 30 ns
- Dual Supply Voltage :
- 60V
- Published :
- 2000
- Height :
- 2.39mm
- Termination :
- SMD/SMT
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Radiation Hardening :
- No
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Factory Lead Time :
- 8 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Rise Time :
- 190ns
- Pulsed Drain Current-Max (IDM) :
- 42A
- Length :
- 6.73mm
- Power Dissipation-Max :
- 3.9W Ta 48W Tc
- Mounting Type :
- Surface Mount
- Additional Feature :
- AVALANCHE RATED
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 570pF @ 25V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Weight :
- 260.37mg
- JESD-30 Code :
- R-PSSO-G2
- Continuous Drain Current (ID) :
- 12A
- Drain to Source Breakdown Voltage :
- 60V
- Resistance :
- 107mOhm
- JESD-609 Code :
- e3
- Nominal Vgs :
- 1.5 V
- Fall Time (Typ) :
- 90 ns
- Rds On (Max) @ Id, Vgs :
- 180m Ω @ 6A, 5V
- Case Connection :
- DRAIN
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Datasheets
- MTD3055VL

N-Channel Tape & Reel (TR) 180m Ω @ 6A, 5V ±20V 570pF @ 25V 10nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63
MTD3055VL Description
The MTD3055VL is a 60V N-channel logic-level MOSFET, which has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The MOSFET MTD3055VL features faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC/DC power supply designs with higher overall efficiency. This product is general usage and suitable for many different applications.
MTD3055VL Features
-
Avalanche Energy Specified
-
IDSS and VDS(on) Specified at Elevated Temperature
-
12A, 60 V. RDS(ON)= 0.180Ω@VGS = 5 V
-
Critical DC electrical parameters are specified at elevated temperatures.
-
Low drive requirements allow operation directly from logic drivers. Vgs(th) < 2 V.
-
A rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
-
175°C maximum junction temperature rating.
MTD3055VL Applications
-
Power Supplies
-
Motor Control
-
Bridge Circuits
-
Motor Starters
-
Reduced Voltage Starters
-
Adjustable-Speed Drives
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