MTD3055VL

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Additional Feature :

AVALANCHE RATED

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Mount :

Surface Mount

Fall Time (Typ) :

90 ns

Power Dissipation :

3.9W

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 5V

Mounting Type :

Surface Mount

Radiation Hardening :

No

FET Type :

N-Channel

Element Configuration :

Single

Drain to Source Breakdown Voltage :

60V

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

240

Pbfree Code :

yes

Weight :

260.37mg

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Vgs (Max) :

±20V

Published :

2000

Rise Time :

190ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn-Off Delay Time :

30 ns

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

12A

Width :

6.22mm

Power Dissipation-Max :

3.9W Ta 48W Tc

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2V @ 250μA

Termination :

SMD/SMT

Factory Lead Time :

8 Weeks

Case Connection :

DRAIN

Height :

2.39mm

Drive Voltage (Max Rds On,Min Rds On) :

5V

Length :

6.73mm

Rds On (Max) @ Id, Vgs :

180m Ω @ 6A, 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Threshold Voltage :

1.5V

Avalanche Energy Rating (Eas) :

72 mJ

Lead Free :

Lead Free

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 25V

Nominal Vgs :

1.5 V

Pulsed Drain Current-Max (IDM) :

42A

Turn On Delay Time :

20 ns

Transistor Element Material :

SILICON

Contact Plating :

Tin

Resistance :

107mOhm

Number of Elements :

1

REACH SVHC :

No SVHC

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Number of Pins :

3

Current Rating :

12A

Voltage - Rated DC :

60V

Gate to Source Voltage (Vgs) :

20V

Dual Supply Voltage :

60V