MTD3055VL

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 5V

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

12A

Power Dissipation :

3.9W

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

3.9W Ta 48W Tc

Drive Voltage (Max Rds On,Min Rds On) :

5V

Time@Peak Reflow Temperature-Max (s) :

30

Weight :

260.37mg

Pulsed Drain Current-Max (IDM) :

42A

Lead Free :

Lead Free

Number of Elements :

1

Pin Count :

3

Height :

2.39mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Factory Lead Time :

8 Weeks

Operating Temperature :

-55°C~175°C TJ

Additional Feature :

AVALANCHE RATED

Drain to Source Breakdown Voltage :

60V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn-Off Delay Time :

30 ns

Element Configuration :

Single

Width :

6.22mm

ECCN Code :

EAR99

Rise Time :

190ns

Current - Continuous Drain (Id) @ 25°C :

12A Tc

RoHS Status :

ROHS3 Compliant

Termination :

SMD/SMT

Number of Terminations :

2

Turn On Delay Time :

20 ns

Vgs(th) (Max) @ Id :

2V @ 250μA

Case Connection :

DRAIN

Voltage - Rated DC :

60V

Peak Reflow Temperature (Cel) :

240

Dual Supply Voltage :

60V

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

180m Ω @ 6A, 5V

Length :

6.73mm

Mount :

Surface Mount

Published :

2000

REACH SVHC :

No SVHC

Number of Pins :

3

Current Rating :

12A

Threshold Voltage :

1.5V

Avalanche Energy Rating (Eas) :

72 mJ

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Contact Plating :

Tin

FET Type :

N-Channel

Resistance :

107mOhm

Radiation Hardening :

No

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 25V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Pbfree Code :

yes

Fall Time (Typ) :

90 ns

Nominal Vgs :

1.5 V