MSR2N2369AUB/TR
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- Mfr.Part #
- MSR2N2369AUB/TR
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- RH SMALL-SIGNAL BJT
- Stock
- 6,059
- In Stock ：
- 6,059
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Brand :
- Microchip Technology
- Manufacturer :
- Microchip
- Voltage - Collector Emitter Breakdown (Max) :
- 15 V
- Supplier Device Package :
- UB
- Frequency - Transition :
- -
- Current - Collector Cutoff (Max) :
- 400nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 10mA, 1V
- Mounting Type :
- Surface Mount
- Subcategory :
- Transistors
- Package :
- Tape and Reel (TR)
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 3mA, 30mA
- Power - Max :
- 360 mW
- Series :
- Military, MIL-PRF-19500
- Product Status :
- Active
- Product Category :
- Bipolar Transistors - BJT
- Product Type :
- BJTs - Bipolar Transistors
- Transistor Type :
- NPN
- Package / Case :
- 3-SMD, No Lead
- Datasheets
- MSR2N2369AUB/TR
NPN -65°C ~ 200°C (TJ) 400nA 3-SMD, No Lead Surface Mount
MSR2N2369AUB/TR Overview
This device has a DC current gain of 40 @ 10mA, 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 250mV @ 3mA, 30mA means Ic has reached its maximum value(saturated).Product package UB comes from the supplier.Collector Emitter Breakdown occurs at 15 VV - Maximum voltage.
MSR2N2369AUB/TR Features
the DC current gain for this device is 40 @ 10mA, 1V
the vce saturation(Max) is 250mV @ 3mA, 30mA
the supplier device package of UB
MSR2N2369AUB/TR Applications
There are a lot of Microchip Technology
MSR2N2369AUB/TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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