MSB1218A-RT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Collector Current :

100mA

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Collector Emitter Voltage (VCEO) :

45V

Collector Emitter Breakdown Voltage :

45V

Terminal Finish :

Tin (Sn)

Factory Lead Time :

2 Weeks

Radiation Hardening :

No

Published :

1997

Mounting Type :

Surface Mount

Transistor Type :

PNP

Power Dissipation :

150mW

Collector Base Voltage (VCBO) :

45V

Voltage - Rated DC :

-45V

Polarity/Channel Type :

PNP

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

Transition Frequency :

100MHz

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

210

Current - Collector Cutoff (Max) :

100μA

Vce Saturation (Max) @ Ib, Ic :

500mV @ 10mA, 100mA

Emitter Base Voltage (VEBO) :

7V

ECCN Code :

EAR99

Surface Mount :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

210 @ 2mA 10V

Current Rating :

-100mA

Terminal Position :

Dual

Number of Pins :

3

JESD-609 Code :

e3

Collector Emitter Saturation Voltage :

500mV

Number of Elements :

1

Terminal Form :

Gull wing

Number of Terminations :

3

Element Configuration :

Single

Transistor Element Material :

SILICON

Pin Count :

3

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

150mW

Package / Case :

SC-70, SOT-323

Transistor Application :

AMPLIFIER