MRF173
- Mfr.Part #
- MRF173
- Manufacturer
- MACOM Technology Solutions
- Package / Case
- 221-11-3
- Datasheet
- Download
- Description
- FET RF 65V 150MHZ 211-11
- Stock
- 43,610
- In Stock :
- 43,610
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- * Fullname:
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- Manufacturer :
- MACOM Technology Solutions
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Rad Hardened :
- No
- Mounting :
- Screw
- Voltage Rating :
- 65 V
- Max Frequency :
- 200 MHz
- Element Configuration :
- Single
- Min Operating Temperature :
- -65 °C
- Package / Case :
- 221-11-3
- Minimum Operating Temperature :
- - 65 C
- Max Operating Temperature :
- 150 °C
- JESD-30 Code :
- O-CRFM-F4
- Noise Figure :
- 1.5 dB
- Product Type :
- RF MOSFET Transistors
- Input Capacitance (Typ)@Vds :
- 110@28V(pF)
- Subcategory :
- MOSFETs
- Gain :
- 13 dB
- Polarity/Channel Type :
- N-Channel
- Maximum Operating Temperature :
- + 150 C
- Product Status :
- Active
- Transistor Application :
- AMPLIFIER
- Terminal Form :
- Flat
- Test Current :
- 50 mA
- Voltage - Test :
- 28 V
- Voltage - Rated :
- 65 V
- Mount :
- Screw
- Channel Mode :
- Enhancement
- Continuous Drain Current :
- 9(A)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- Single
- Manufacturer :
- MACOM
- Power - Output :
- 80W
- Drain Source Voltage (Max) :
- 65(V)
- Channel Type :
- N
- Package Type :
- CASE 211-11
- Gate to Source Voltage (Vgs) :
- 40 V
- Transistor Type :
- N-Channel
- Mounting Style :
- SMD/SMT
- Terminal Position :
- Radial
- Operating Temp Range :
- -65C to 200C
- Operating Frequency :
- 200 MHz
- Power Gain (Typ)@Vds :
- 13(dB)
- Current - Test :
- 50 mA
- Package Shape :
- Round
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Current Rating :
- 9 A
- Continuous Drain Current (ID) :
- 9 A
- Drain Efficiency (Typ) :
- 60(%)
- Number of Terminals :
- 4
- Packaging :
- Tray
- Operating Mode :
- ENHANCEMENT MODE
- Drain Current-Max (Abs) (ID) :
- 9 A
- Brand :
- MACOM
- Transistor Polarity :
- N-Channel
- Number of Pins :
- 4
- Drain to Source Voltage (Vdss) :
- 65 V
- Radiation Hardening :
- No
- Pin Count :
- 4
- DS Breakdown Voltage-Min :
- 65 V
- Power Dissipation-Max (Abs) :
- 220 W
- Output Power :
- 80 W
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- Compliant
- Technology :
- Si
- Product Category :
- RF MOSFET Transistors
- Frequency :
- 150 MHz
- Frequency (Max) :
- 200(MHz)
- Package :
- Tray
- Power Dissipation (Max) :
- 220000(mW)
- Surface Mount :
- No
- Highest Frequency Band :
- VERY HIGH FREQUENCY BAND
- RoHS :
- Compliant
- Series :
- -
- Test Voltage :
- 28 V
- Current Rating (Amps) :
- 9A
- Drain to Source Breakdown Voltage :
- 65 V
- Lead Free :
- Lead Free
- Supplier Device Package :
- 211-11, Style 2
- Max Power Dissipation :
- 220 W
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Output Power (Max) :
- 80
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Type :
- RF Power MOSFET
- Screening Level :
- Military
- Datasheets
- MRF173

MRF173 datasheet pdf and Discrete Semiconductor Products product details from MA-COM stock available at
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