MRF173

Manufacturer :

MACOM Technology Solutions

Product Category :

Transistors - FETs, MOSFETs - RF

JESD-30 Code :

O-CRFM-F4

Reach Compliance Code :

Compliant

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Typ)@Vds :

110@28V(pF)

Channel Type :

N

Gate to Source Voltage (Vgs) :

40 V

Drain Current-Max (Abs) (ID) :

9 A

Drain to Source Breakdown Voltage :

65 V

Current Rating (Amps) :

9A

Noise Figure :

1.5 dB

Frequency :

150 MHz

Channel Mode :

Enhancement

Supplier Device Package :

211-11, Style 2

Maximum Operating Temperature :

+ 150 C

Output Power :

80 W

Test Current :

50 mA

Lead Free :

Lead Free

Mounting :

Screw

Qualification Status :

Not Qualified

Terminal Form :

Flat

Continuous Drain Current (ID) :

9 A

Minimum Operating Temperature :

- 65 C

Test Voltage :

28 V

Package Shape :

Round

Terminal Position :

Radial

Product Category :

RF MOSFET Transistors

Product Type :

RF MOSFET Transistors

Package Type :

CASE 211-11

Operating Temp Range :

-65C to 200C

Operating Frequency :

200 MHz

Max Frequency :

200 MHz

Packaging :

Tray

Number of Pins :

4

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Radiation Hardening :

No

Power Gain (Typ)@Vds :

13(dB)

Product Status :

Active

Voltage - Test :

28 V

Mount :

Screw

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Voltage Rating :

65 V

Mounting Style :

SMD/SMT

Type :

RF Power MOSFET

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Frequency (Max) :

200(MHz)

Configuration :

Single

Power - Output :

80W

Continuous Drain Current :

9(A)

Package / Case :

221-11-3

Number of Terminals :

4

Min Operating Temperature :

-65 °C

Gain :

13 dB

Pin Count :

4

Max Operating Temperature :

150 °C

DS Breakdown Voltage-Min :

65 V

Current - Test :

50 mA

Subcategory :

MOSFETs

Element Configuration :

Single

Transistor Application :

AMPLIFIER

Pbfree Code :

yes

Highest Frequency Band :

VERY HIGH FREQUENCY BAND

Power Dissipation-Max (Abs) :

220 W

Series :

-

Polarity/Channel Type :

N-Channel

Transistor Polarity :

N-Channel

Package :

Tray

Rad Hardened :

No

Screening Level :

Military

Brand :

MACOM

Max Power Dissipation :

220 W

Technology :

Si

Transistor Type :

N-Channel

Surface Mount :

No

Drain to Source Voltage (Vdss) :

65 V

Power Dissipation (Max) :

220000(mW)

Manufacturer :

MACOM

Drain Source Voltage (Max) :

65(V)

Voltage - Rated :

65 V

Number of Elements :

1

Output Power (Max) :

80

RoHS :

Compliant

Current Rating :

9 A

Drain Efficiency (Typ) :

60(%)