MRF173

Manufacturer :

MACOM Technology Solutions

Product Category :

Transistors - FETs, MOSFETs - RF

Mounting :

Screw

Max Frequency :

200 MHz

Manufacturer :

MACOM

Number of Elements :

1

Power - Output :

80W

Transistor Polarity :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Min Operating Temperature :

-65 °C

Minimum Operating Temperature :

- 65 C

Channel Type :

N

Package Shape :

Round

Current Rating :

9 A

Technology :

Si

ECCN Code :

EAR99

RoHS :

Compliant

Gain :

13 dB

Transistor Element Material :

SILICON

Reach Compliance Code :

Compliant

Rad Hardened :

No

Drain Source Voltage (Max) :

65(V)

Package / Case :

221-11-3

Output Power (Max) :

80

Power Gain (Typ)@Vds :

13(dB)

JESD-30 Code :

O-CRFM-F4

Product Type :

RF MOSFET Transistors

Pin Count :

4

Current - Test :

50 mA

Maximum Operating Temperature :

+ 150 C

Package Type :

CASE 211-11

Number of Pins :

4

Test Voltage :

28 V

Qualification Status :

Not Qualified

Type :

RF Power MOSFET

Drain Efficiency (Typ) :

60(%)

Series :

-

Voltage - Rated :

65 V

Subcategory :

MOSFETs

Terminal Form :

Flat

Lead Free :

Lead Free

Supplier Device Package :

211-11, Style 2

Operating Frequency :

200 MHz

Radiation Hardening :

No

Highest Frequency Band :

VERY HIGH FREQUENCY BAND

Brand :

MACOM

Output Power :

80 W

Voltage Rating :

65 V

Package :

Tray

Mounting Style :

SMD/SMT

Power Dissipation (Max) :

220000(mW)

Drain to Source Breakdown Voltage :

65 V

Drain Current-Max (Abs) (ID) :

9 A

Number of Terminals :

4

Terminal Position :

Radial

Screening Level :

Military

Transistor Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

9 A

Input Capacitance (Typ)@Vds :

110@28V(pF)

Continuous Drain Current :

9(A)

Pbfree Code :

yes

Max Operating Temperature :

150 °C

DS Breakdown Voltage-Min :

65 V

Product Category :

RF MOSFET Transistors

Product Status :

Active

Gate to Source Voltage (Vgs) :

40 V

Channel Mode :

Enhancement

Polarity/Channel Type :

N-Channel

Frequency :

150 MHz

Noise Figure :

1.5 dB

Max Power Dissipation :

220 W

Drain to Source Voltage (Vdss) :

65 V

Surface Mount :

No

Frequency (Max) :

200(MHz)

Mount :

Screw

Configuration :

Single

Transistor Application :

AMPLIFIER

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs) :

220 W

Operating Temp Range :

-65C to 200C

Current Rating (Amps) :

9A

Voltage - Test :

28 V

Element Configuration :

Single

Packaging :

Tray

Test Current :

50 mA