MPSA92RLRMG
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- Mfr.Part #
- MPSA92RLRMG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 300V 0.5A TO92
- Stock
- 26,000
- In Stock ：
- 26,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- REACH SVHC :
- Unknown
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Collector Emitter Saturation Voltage :
- -500mV
- Height :
- 6.35mm
- JESD-609 Code :
- e1
- Collector Base Voltage (VCBO) :
- 300V
- Current Rating :
- -500mA
- Lead Free :
- Lead Free
- Max Collector Current :
- 500mA
- hFE Min :
- 25
- Radiation Hardening :
- No
- Width :
- 6.35mm
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Transition Frequency :
- 50MHz
- Voltage - Rated DC :
- -300V
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 250nA ICBO
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Pins :
- 3
- Terminal Position :
- BOTTOM
- Emitter Base Voltage (VEBO) :
- 5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 4.535924g
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Gain Bandwidth Product :
- 50MHz
- Surface Mount :
- No
- Max Power Dissipation :
- 625mW
- Published :
- 2010
- Packaging :
- Tape and Box (TB)
- RoHS Status :
- RoHS Compliant
- Frequency :
- 50MHz
- Transistor Type :
- PNP
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Polarity/Channel Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 300V
- Max Breakdown Voltage :
- 300V
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 300V
- Power Dissipation :
- 625mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 30mA 10V
- Length :
- 6.35mm
- Base Part Number :
- MPSA92
- Datasheets
- MPSA92RLRMG
PNP -55°C~150°C TJ 250nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA92RLRMG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 25 @ 30mA 10V.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 300V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
MPSA92RLRMG Features
the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz
MPSA92RLRMG Applications
There are a lot of ON Semiconductor
MPSA92RLRMG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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