MPSA92RLRMG
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- Mfr.Part #
- MPSA92RLRMG
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- MPSA92 - MPSA92 - PNP BIPOLAR SM
- Stock
- 26,000
- In Stock ：
- 26,000
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- REACH SVHC :
- Unknown
- Mounting Type :
- Through Hole
- Published :
- 2010
- JESD-609 Code :
- e1
- Packaging :
- Tape and Box (TB)
- Width :
- 6.35mm
- Collector Emitter Saturation Voltage :
- -500mV
- Frequency :
- 50MHz
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 30mA 10V
- Gain Bandwidth Product :
- 50MHz
- Collector Emitter Voltage (VCEO) :
- 300V
- Polarity/Channel Type :
- PNP
- Collector Base Voltage (VCBO) :
- 300V
- Length :
- 6.35mm
- Max Collector Current :
- 500mA
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 250nA ICBO
- Pin Count :
- 3
- Surface Mount :
- No
- Power Dissipation :
- 625mW
- Max Breakdown Voltage :
- 300V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- BOTTOM
- Number of Elements :
- 1
- Height :
- 6.35mm
- hFE Min :
- 25
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Voltage - Rated DC :
- -300V
- Peak Reflow Temperature (Cel) :
- 260
- Weight :
- 4.535924g
- RoHS Status :
- RoHS Compliant
- Max Power Dissipation :
- 625mW
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 50MHz
- Base Part Number :
- MPSA92
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Lead Free :
- Lead Free
- Current Rating :
- -500mA
- Collector Emitter Breakdown Voltage :
- 300V
- Number of Terminations :
- 3
- Datasheets
- MPSA92RLRMG
PNP -55°C~150°C TJ 250nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA92RLRMG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 25 @ 30mA 10V.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 300V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
MPSA92RLRMG Features
the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz
MPSA92RLRMG Applications
There are a lot of ON Semiconductor
MPSA92RLRMG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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