MPSA92_D81Z

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Mfr.Part #
MPSA92_D81Z
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS PNP 300V 0.5A TO92-3
Stock
4,302
In Stock :
4,302

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
PNP
hFE Min :
40
Element Configuration :
Single
Radiation Hardening :
No
Max Power Dissipation :
625mW
Collector Emitter Voltage (VCEO) :
300V
Frequency :
50MHz
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Emitter Base Voltage (VEBO) :
5V
Power Dissipation :
625mW
Collector Emitter Saturation Voltage :
500mV
Packaging :
Tape and Reel (TR)
Number of Pins :
3
Mounting Type :
Through Hole
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Collector Emitter Breakdown Voltage :
300V
Max Collector Current :
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
25 @ 30mA 10V
Number of Elements :
1
RoHS Status :
RoHS Compliant
Collector Base Voltage (VCBO) :
300V
Gain Bandwidth Product :
50MHz
Mount :
Through Hole
Operating Temperature :
-55°C~150°C TJ
Base Part Number :
MPSA92
Current - Collector Cutoff (Max) :
250nA ICBO
Vce Saturation (Max) @ Ib, Ic :
500mV @ 2mA, 20mA
Datasheets
MPSA92_D81Z
Introducing Transistors - Bipolar (BJT) - Single onsemi MPSA92_D81Z from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Operating Temperature:-55°C~150°C TJ, Base Part Number:MPSA92, MPSA92_D81Z pinout, MPSA92_D81Z datasheet PDF, MPSA92_D81Z amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MPSA92_D81Z ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MPSA92_D81Z


PNP -55°C~150°C TJ 250nA ICBO 1 Elements TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole

MPSA92_D81Z Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 25 @ 30mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 2mA, 20mA.The emitter base voltage can be kept at 5V for high efficiency.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

MPSA92_D81Z Features


the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V


MPSA92_D81Z Applications


There are a lot of ON Semiconductor
MPSA92_D81Z applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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