MPSA63RLRA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Application :

AMPLIFIER

Transistor Type :

PNP - Darlington

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

625mW

Transition Frequency :

125MHz

Emitter Base Voltage (VEBO) :

10V

Pbfree Code :

No

Current Rating :

-500mA

Time@Peak Reflow Temperature-Max (s) :

30

Current - Collector Cutoff (Max) :

100nA ICBO

Collector Base Voltage (VCBO) :

30V

Continuous Collector Current :

-500mA

Max Power Dissipation :

625mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

10000 @ 100mA 5V

Element Configuration :

Single

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 17 hours ago)

ECCN Code :

EAR99

Mount :

Through Hole

Lead Free :

Contains Lead

Number of Terminations :

3

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 100µA, 100mA

JESD-609 Code :

e0

Max Collector Current :

500mA

Reach Compliance Code :

not_compliant

HTS Code :

8541.21.00.75

Voltage - Rated DC :

-30V

Published :

2007

Terminal Position :

BOTTOM

Frequency - Transition :

125MHz

Peak Reflow Temperature (Cel) :

240

Base Part Number :

MPSA63

Mounting Type :

Through Hole

Max Breakdown Voltage :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin/Lead (Sn/Pb)

Qualification Status :

Not Qualified

Collector Emitter Voltage (VCEO) :

1.5V

Number of Pins :

3

Number of Elements :

1

RoHS Status :

Non-RoHS Compliant

Packaging :

Tape and Reel (TR)

Polarity :

PNP

Pin Count :

3

Collector Emitter Breakdown Voltage :

30V