MPSA56RLRAG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

Number of Terminations :

3

Collector Base Voltage (VCBO) :

80V

Base Part Number :

MPSA56

Mounting Type :

Through Hole

Weight :

4.535924g

Current - Collector Cutoff (Max) :

100nA

Operating Temperature :

-55°C~150°C TJ

Transistor Type :

PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2004

Voltage - Rated DC :

-80V

Current Rating :

-500mA

Power Dissipation :

625mW

Transition Frequency :

50MHz

Number of Pins :

3

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Emitter Base Voltage (VEBO) :

4V

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Terminal Position :

BOTTOM

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

80V

Time@Peak Reflow Temperature-Max (s) :

40

Polarity/Channel Type :

PNP

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Elements :

1

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

80V

Max Collector Current :

500mA

Element Configuration :

Single

REACH SVHC :

No SVHC

JESD-609 Code :

e1

Transistor Application :

AMPLIFIER

Length :

5.2mm

Pin Count :

3

Surface Mount :

No

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

hFE Min :

100

Frequency :

50MHz

Width :

4.19mm

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

260

Height :

5.33mm

Collector Emitter Saturation Voltage :

250mV

Lead Free :

Lead Free

Max Breakdown Voltage :

80V

Max Power Dissipation :

625mW

Gain Bandwidth Product :

50MHz