MPSA56G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Polarity/Channel Type :

PNP

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Breakdown Voltage :

80V

Pin Count :

3

Gain Bandwidth Product :

50MHz

Element Configuration :

Single

Number of Terminations :

3

Collector Base Voltage (VCBO) :

80V

JESD-609 Code :

e1

Number of Elements :

1

RoHS Status :

RoHS Compliant

Published :

2007

Frequency :

50MHz

Length :

5.2mm

Height :

5.33mm

Voltage - Rated DC :

-80V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

625mW

Collector Emitter Voltage (VCEO) :

80V

Terminal Position :

BOTTOM

Collector Emitter Saturation Voltage :

250mV

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Emitter Base Voltage (VEBO) :

4V

Transistor Application :

AMPLIFIER

Lead Free :

Lead Free

Mount :

Through Hole

Transistor Element Material :

SILICON

Current Rating :

-500mA

Weight :

4.535924g

Transistor Type :

PNP

Mounting Type :

Through Hole

Width :

4.19mm

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

Base Part Number :

MPSA56

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

ECCN Code :

EAR99

Transition Frequency :

50MHz

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

100nA

Packaging :

Bulk

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Max Collector Current :

500mA

hFE Min :

100

Radiation Hardening :

No

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 day ago)

Max Power Dissipation :

625mW