MPSA42RLRP
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- Mfr.Part #
- MPSA42RLRP
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A TO92
- Stock
- 1,757
- In Stock ：
- 1,757
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- AMPLIFIER
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Polarity/Channel Type :
- NPN
- Published :
- 1998
- Terminal Position :
- BOTTOM
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1mA 10V
- Lead Free :
- Contains Lead
- Emitter Base Voltage (VEBO) :
- 6V
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Emitter Breakdown Voltage :
- 300V
- HTS Code :
- 8541.21.00.95
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 50MHz
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 300V
- Peak Reflow Temperature (Cel) :
- 240
- JESD-609 Code :
- e0
- Mounting Type :
- Through Hole
- Voltage - Rated DC :
- 300V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Reach Compliance Code :
- not_compliant
- RoHS Status :
- Non-RoHS Compliant
- Mount :
- Through Hole
- Packaging :
- Tape and Box (TB)
- Transistor Type :
- NPN
- Current Rating :
- 500mA
- Transition Frequency :
- 50MHz
- Operating Temperature :
- -55°C~150°C TJ
- JESD-30 Code :
- O-PBCY-T3
- Collector Emitter Voltage (VCEO) :
- 500mV
- Max Power Dissipation :
- 625mW
- hFE Min :
- 25
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 500mV
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Collector Current :
- 500mA
- Qualification Status :
- Not Qualified
- Base Part Number :
- MPSA42
- Datasheets
- MPSA42RLRP
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA42RLRP Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 25 @ 1mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 2mA, 20mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
MPSA42RLRP Features
the DC current gain for this device is 25 @ 1mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
MPSA42RLRP Applications
There are a lot of ON Semiconductor
MPSA42RLRP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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