MPSA42RLRFG
- Mfr.Part #
- MPSA42RLRFG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A TO92
- Stock
- 18,681
- In Stock :
- 18,681
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- JESD-30 Code :
- O-PBCY-T3
- Base Part Number :
- MPSA42
- Terminal Position :
- BOTTOM
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Base Voltage (VCBO) :
- 300V
- Current Rating :
- 500mA
- Peak Reflow Temperature (Cel) :
- 260
- hFE Min :
- 25
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transition Frequency :
- 50MHz
- Packaging :
- Tape and Box (TB)
- Number of Elements :
- 1
- Number of Terminations :
- 3
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Polarity/Channel Type :
- NPN
- HTS Code :
- 8541.21.00.95
- Max Power Dissipation :
- 625mW
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 500mV
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1mA 10V
- Voltage - Rated DC :
- 300V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Reach Compliance Code :
- Unknown
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Collector Emitter Voltage (VCEO) :
- 500mV
- Emitter Base Voltage (VEBO) :
- 6V
- Max Collector Current :
- 500mA
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e1
- Gain Bandwidth Product :
- 50MHz
- Lead Free :
- Lead Free
- Published :
- 2005
- Collector Emitter Breakdown Voltage :
- 300V
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Datasheets
- MPSA42RLRFG

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA42RLRFG Overview
In this device, the DC current gain is 25 @ 1mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 2mA, 20mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (500mA).50MHz is present in the transition frequency.Maximum collector currents can be below 500mA volts.
MPSA42RLRFG Features
the DC current gain for this device is 25 @ 1mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
MPSA42RLRFG Applications
There are a lot of ON Semiconductor
MPSA42RLRFG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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