MPSA42RL1G
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- Mfr.Part #
- MPSA42RL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A TO92
- Stock
- 24,530
- In Stock ：
- 24,530
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- Current Rating :
- 500mA
- Collector Emitter Saturation Voltage :
- 500mV
- Transistor Type :
- NPN
- Max Power Dissipation :
- 625mW
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Frequency :
- 50MHz
- Power Dissipation :
- 625mW
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- hFE Min :
- 25
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- Transition Frequency :
- 50MHz
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- MPSA42
- Gain Bandwidth Product :
- 50MHz
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 19 hours ago)
- Number of Pins :
- 3
- Surface Mount :
- No
- Collector Base Voltage (VCBO) :
- 300V
- Max Breakdown Voltage :
- 300V
- Max Collector Current :
- 500mA
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- 300V
- Collector Emitter Voltage (VCEO) :
- 300V
- Number of Elements :
- 1
- Number of Terminations :
- 3
- JESD-609 Code :
- e1
- Published :
- 2009
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 300V
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- MPSA42RL1G
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPSA42RL1G Overview
In this device, the DC current gain is 40 @ 30mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 2mA, 20mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Input voltage breakdown is available at 300V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MPSA42RL1G Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
MPSA42RL1G Applications
There are a lot of ON Semiconductor
MPSA42RL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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